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| PD - 9.1098B PRELIMINARY IRF7106 N-CHANNEL MOSFET 1 8 HEXFET (R) Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design for which HEXFET Power MOSFETs are well known, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra-red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. S1 G1 S2 G2 D1 D1 D2 D2 N-Ch VDSS 20V P-Ch -20V 2 7 3 6 4 5 RDS(on) 0.125 0.20 ID 3.0A -2.5A P-CHANNEL MOSFET Top View SO-8 Absolute Maximum Ratings Parameter N-Channel ID @ T C = 25C ID @ T C = 70C IDM PD @T C = 25C VGS dv/dt TJ, TSTG Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range 3.0 2.5 10 2.0 0.016 20 3.0 -55 to + 150 -3.0 Max. P-Channel -2.5 -2.0 -10 Units A W W/C V V/ns C Thermal Resistance Parameter RJA Junction-to-Ambient (PCB Mount)** Min. ---- Typ. ---- Max. 62.5 Units C/W ** When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. Revision 3 69 IRF7106 Electrical Characteristics @ T J = 25C (unless otherwise specified) Parameter V(BR)DSS Drain-to-Source Breakdown Voltage N-Ch P-Ch N-Ch P-Ch N-Ch RDS(ON) Static Drain-to-Source On-Resistance P-Ch VGS(th) gfs Gate Threshold Voltage Forward Transconductance N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-P N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-P N-P N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. 20 -20 -- -- -- -- -- -- 1.0 -1.0 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. Max. -- -- -- -- 0.037 -- -0.022 -- -- 0.125 -- 0.25 -- 0.20 -- 0.35 -- -- -- -- 4.4 -- 3.0 -- -- 2.0 -- -2.0 -- 25 -- -25 -- 100 9.1 25 11 25 1.2 -- 1.6 -- 2.5 -- 3.5 -- 5.0 15 10 40 10 20 15 40 29 50 41 90 22 50 39 60 4.0 -- 6.0 -- 300 -- 280 -- 260 -- 250 -- 62 -- 86 -- Units V V/C V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V S IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductace Internal Source Inductance Imput Capacitance Coss Output Capacitance A nA Conditions VGS = 0V, I D = 250A VGS = 0V, I D = -250A Reference to 25C, I D = 1mA Reference to 25C, I D = -1mA VGS = 10V, I D = 1.0A VGS = 4.5V, I D = 0.50A VGS = -10V, I D = -1.0A VGS = -4.5V, I D = -0.50A VDS = VGS, ID = 250A VDS = VGS, ID = -250A VDS = 15V, ID = 3.0A VDS = -15V, ID = -3.0A VDS = 16V, VGS = 0V VDS = -16V, VGS = 0V VDS = 16V, VGS = 0V, T J = 125C VDS = -16V, VGS = 0V, T J = 125C VGS = 20V N-Channel ID = 2.3A, V DS = 10V, V GS = 10V nC P-Channel ID = -2.3A, V DS = -10V, V GS = -10V N-Channel VDD = 20V, I D = 1.0A, R G = 6.0, RD = 20 ns P-Channel VDD = -20V, I D = -1.0A, R G = 6.0, RD = 20 nH Between lead tip and center of die contact N-Channel VGS = 0V, V DS = 15V, = 1.0MHz pF P-Channel VGS = 0V, V DS = -15V, = 1.0MHz Crss Reverse Transfer Capacitance Source-Drain Ratings and Characteristics Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-P Min. Typ. Max. Units Conditions -- -- 1.7 -- -- -1.6 A -- -- 10 -- -- -10 -- 0.90 1.2 T J = 25C, I S = 1.6A, V GS = 0V V -- -0.90 -1.6 T J = 25C, I S = -1.3A, V GS = 0V -- 69 100 ns N-Channel -- 69 100 T J = 25C, I F = 1.25A, di/dt = 100A/s -- 58 120 nC P-Channel T J = 25C, I F = -1.25A, di/dt = 100A/s -- 91 180 Intrinsic turn-on time is neglegible (turn-on is dominated by L S+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 23 ) N-Channel ISD 2.3A, di/dt 100A/s, V DD V(BR)DSS, T J 150C P-Channel ISD -2.3A, di/dt 50A/s, V DD V(BR)DSS, T J 150C Pulse width 300s; duty cycle 2%. 70 N-Channel 100 IRF7106 100 I , Drain-to-Source Current (A) D 10 4.5V I , Drain-to-Source Current (A) D VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 10 4.5V 1 1 0.1 0.01 20s PULSE WIDTH TJ = 25C 0.1 1 10 100 A 0.1 0.01 20s PULSE WIDTH TJ = 150C 0.1 1 10 100 A VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics, TJ = 25oC 100 Fig 2. Typical Output Characteristics, T J = 150oC 2.0 R DS(on) , Drain-to-Source On Resistance (Normalized) I D = 3.0A I D , Drain-to-Source Current (A) 1.5 TJ = 25C TJ = 150C 1.0 0.5 10 4 5 6 7 VDS = 15V 20s PULSE WIDTH 8 9 10 A 0.0 -60 -40 -20 0 20 40 60 80 VGS = 10V 100 120 140 160 A VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature (C) Fig 3. Typical Transfer Characteristics 800 Fig 4. Normalized On-Resistance Vs. Temperature 20 V GS , Gate-to-Source Voltage (V) V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd I D = 2.3A VDS = 10V 16 C, Capacitance (pF) 600 C oss 12 400 Ciss 8 200 Crss 4 0 1 10 100 A 0 0 2 4 6 FOR TEST CIRCUIT SEE FIGURE 11 8 10 12 14 A V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 71 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage IRF7106 100 N-Channel 100 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) 10 I D , Drain Current (A) TJ = 150C TJ = 25C 10 1ms 10ms 1 100ms 1 0.1 0.4 0.6 0.8 1.0 VGS = 0V 1.2 A 0.1 T A = 25C T J = 150C Single Pulse 0.1 1 10 100 1.4 A VSD , Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 3.0 Fig 8. Maximum Safe Operating Area 2.5 ID, Drain Current (Amps) 2.0 1.5 1.0 Fig 10a. Switching Time Test Circuit 0.5 0.0 25 50 75 100 125 A 150 TA , Ambient Temperature (C) Fig 9. Maximum Drain Current Vs. Ambient Temperature Fig 10b. Switching Time Waveforms Fig 11a. Gate Charge Test Circuit 72 Fig 11b. Basic Gate Charge Waveform P-Channel 100 IRF7106 100 -ID , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V TOP VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V TOP 10 10 -4.5V -4.5V 1 1 0.1 0.1 1 20s PULSE WIDTH TJ = 25C A 10 100 0.1 0.1 1 20s PULSE WIDTH TJ = 150C 10 A 100 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 12. Typical Output Characteristics, TJ = 25oC 100 Fig 13. Typical Output Characteristics, TJ = 150oC 2.0 R DS(on) , Drain-to-Source On Resistance (Normalized) I D = -2.5A -ID , Drain-to-Source Current (A) 1.5 TJ = 25C TJ = 150C 10 1.0 0.5 1 4 6 VDS = -15V 20s PULSE WIDTH 8 10 A 0.0 -60 VGS = -10V -40 -20 0 20 40 60 80 A 100 120 140 160 -VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature (C) Fig 14. Typical Transfer Characteristics 800 Fig 15. Normalized On-Resistance Vs. Temperature 20 -VGS , Gate-to-Source Voltage (V) V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd I D = -2.3A VDS = -10V C, Capacitance (pF) 600 16 Coss 400 Ciss 12 8 200 Crss 4 0 1 10 100 A 0 0 4 8 FOR TEST CIRCUIT SEE FIGURE 22 12 16 20 A -VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 16. Typical Capacitance Vs. Drain-to-Source Voltage 73 Fig 17. Typical Gate Charge Vs. Gate-to-Source Voltage IRF7106 10 P-Channel 100 -ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) TJ = 150C -I D , Drain Current (A) 10 1ms TJ = 25C 1 10ms 1 100ms 0.1 0.0 1.0 2.0 VGS = 0V A 0.1 TA = 25C TJ = 150C Single Pulse 0.1 1 10 100 A 3.0 -VSD , Source-to-Drain Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 18. Typical Source-Drain Diode Forward Voltage 2.5 Fig 19. Maximum Safe Operating Area 2.0 -ID, Drain Current (Amps) 1.5 1.0 0.5 Fig 21a. Switching Time Test Circuit A 25 50 75 100 125 150 0.0 TA , Ambient Temperature (C) Fig 20. Maximum Drain Current Vs. Ambient Temperature Fig 21b. Switching Time Waveforms Fig 22a. Gate Charge Test Circuit 74 Fig 22b. Basic Gate Charge Waveform N-P Channel IRF7106 100 Thermal Response (Z thJA ) D = 0.50 0.20 10 0.10 0.05 0.02 1 PD M 0.01 SINGLE PULSE (THERMAL RESPONSE) t 1 t 2 N o te s: 1 . D u ty fa c to r D = t 1 /t 2 0.1 0.00001 2 . P e a k TJ = P D M x Z th J A + T A A 1000 0.0001 0.001 0.01 0.1 1 10 100 t 1 , Rectangular Pulse Duration (sec) Fig 23. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient Refer to the Appendix Section for the following: Appendix A: Appendix B: Appendix C: Appendix D: Figure 24, Peak Diode Recovery dv/dt Test Circuit -- See page 329. Package Outline Mechanical Drawing -- See page 332. Part Marking Information -- See page 332. Tape and Reel Information -- See page 336. 75 |
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